A team of Chinese scientists has developed a groundbreaking flash memory device capable of storing data at an unprecedented ...

New non-volatile tech writes a bit in 400 picoseconds A team of boffins at Fudan University have emerged from their ...

Researchers from Shanghai-based Fudan University have developed a picosecond-level flash memory device with an unprecedented ...

To put this achievement into perspective, PoX can perform 25 billion operations per second – surpassing the previous world record for similar technology by a factor of 100,000.

As AI systems demand faster, denser memory, researchers in Shanghai have developed a flash device that operates at picosecond ...

Chinese researchers from Fudan University have developed a prototype of a new generation of flash memory capable of recording data at a ...

Rice-sized memory device breaks speed barrier once thought impossible, capable of erasing and rewriting data 100,000 times faster than before.

Researchers have created a next-generation RAM that can process data 10,000 times faster than anything we have right now.

By re-configuring the architecture of flash memory, researchers have managed to achieve unprecedented data write and read ...

A Chinese research team has developed a revolutionary flash memory device that can store data at a speed of one bit ...