Researchers at Fudan University have announced a breakthrough in flash memory with what they claim is the fastest device ever ...

Rice-sized memory device breaks speed barrier once thought impossible, capable of erasing and rewriting data 100,000 times ...

Poxiao”, or Dawn, is the fastest flash memory ever created. It can erase and rewrite data in 400 picoseconds. Memory on the ...

A Chinese research team has developed a revolutionary flash memory device that can store data at a speed of one bit ...

Magnetoresistive random-access memory, or MRAM, promises to make computers more efficient and powerful, but a few hurdles ...

Researchers from Shanghai-based Fudan University have developed a picosecond-level flash memory device with an unprecedented ...

The development of more energy-efficient hardware for artificial intelligence (AI) systems is receiving increased support, with a focus on improving memory technology. A hybrid type of memory that ...

Researchers from Fudan University in Shanghai have developed a picosecond-level flash memory device with an unprecedented ...

In the quest for enhanced fortune and spiritual growth, aligning oneself with personalized mantras can be profoundly ...

MRAM is one of the most promising emerging memory technologies we have, as it can theoretical improve on nearly every metric of existing DRAM and SRAM technologies. However, MRAM requires ...