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Researchers at Fudan University have announced a breakthrough in flash memory with what they claim is the fastest device ever ...
Rice-sized memory device breaks speed barrier once thought impossible, capable of erasing and rewriting data 100,000 times ...
Poxiao”, or Dawn, is the fastest flash memory ever created. It can erase and rewrite data in 400 picoseconds. Memory on the ...
A Chinese research team has developed a revolutionary flash memory device that can store data at a speed of one bit ...
Researchers from Shanghai-based Fudan University have developed a picosecond-level flash memory device with an unprecedented ...
Researchers from Fudan University in Shanghai have developed a picosecond-level flash memory device with an unprecedented ...
A research team at Fudan University has built the fastest semiconductor storage device ever reported, a non‑volatile flash ...
By re-configuring the architecture of flash memory, researchers have managed to achieve unprecedented data write and read ...
The UX8LD eDRAM technology features low leakage-current levels that reduce power consumption by as much two-thirds compared to equivalent SRAM, making it ideal for ... and zirconium-oxide DRAM ...