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Multi-Level Cell Structure for Capacitor-Less 1T DRAM With SiGe-Based Separated Data Storing Regions
Abstract: One-transistor dynamic random-access memory (1T DRAM) offers significant advantages in fabrication process and scalability over the traditional one-transistor one-capacitor (1T-1C) DRAM due ...
The global stablecoin supply could surge to $1 trillion by the end of 2025, potentially becoming a key catalyst for broader cryptocurrency market growth, according to David Pakman, managing ...
Thailand unveiled draft legislation to create a special economic zone in the south of the country that would pave the way for a multibillion-dollar transport project linking the Indian and Pacific ...
Material Measurement Laboratory, National Institute of Standards and Technology (NIST), Gaithersburg, Maryland 20899, United States ...
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