To put this achievement into perspective, PoX can perform 25 billion operations per second – surpassing the previous world ...

Researchers from Shanghai-based Fudan University have developed a picosecond-level flash memory device with an unprecedented ...

By re-configuring the architecture of flash memory, researchers have managed to achieve unprecedented data write and read ...

As AI systems demand faster, denser memory, researchers in Shanghai have developed a flash device that operates at picosecond ...

Chinese researchers have engineered Poxiao, a groundbreaking flash memory, achieving unprecedented speeds of 400 picoseconds ...

Researchers from Fudan University in Shanghai have developed a picosecond-level flash memory device with an unprecedented program speed of 400 picoseconds — equivalent to operating 25 billion times ...

Researchers at Fudan University on Thursday unveiled “Poxiao”, or Dawn, the fastest flash memory ever created, which can erase and rewrite data in 400 picoseconds. One picosecond is one ...

In a world fixated on the race for superior artificial intelligence (AI), Chinese scientists have cracked the code to memory ...

NOVOSENSE Microelectronics has announced the launch of the NSUC1500-Q1, a highly integrated System-on-Chip (SoC) designed to ...

Thanks to a combination of high-speed USB 3.2 Gen 2 Type-C connector and fast TLC flash memory from Micron TLC, you can expect this flash drive to offer spectacular speeds. It also features a ...

Emerging high-performance applications demand increasingly fast read throughputs from NOR-flash memory devices. At the same time, the pin-count required to implement ...