PoX is a new class of ultra‑fast, ultra‑green memories that meet the swelling appetite of large‑language‑model accelerators.

Researchers from Shanghai-based Fudan University have developed a picosecond-level flash memory device with an unprecedented ...

By re-configuring the architecture of flash memory, researchers have managed to achieve unprecedented data write and read ...

As AI systems demand faster, denser memory, researchers in Shanghai have developed a flash device that operates at picosecond ...

Chinese researchers have engineered Poxiao, a groundbreaking flash memory, achieving unprecedented speeds of 400 picoseconds ...

Researchers from Fudan University in Shanghai have developed a picosecond-level flash memory device with an unprecedented program speed of 400 picoseconds — equivalent to operating 25 billion times ...

In a world fixated on the race for superior artificial intelligence (AI), Chinese scientists have cracked the code to memory ...

Micron has just announced that it's raising its prices. You might be surprised by how many different products might be affected by this change.

Emerging high-performance applications demand increasingly fast read throughputs from NOR-flash memory devices. At the same time, the pin-count required to implement ...

Repairs, surfing, virus check, complete system? The fact that a large USB stick offers space for 50 live systems should not ...

Samsung Electronics plans to increase DRAM and NAND Flash memory prices by 3-5% in response to potential new US semiconductor ...

SPONSORED CONTENT Consider, for a moment, the current state of AI accelerators and datacenter GPUs. Now, try to imagine this landscape without Micron Technology’s entry into the High Bandwidth Memory ...